Samsung unveils 2 Gb SDRAM
Staff -- Purchasing, 10/21/2004 2:00:00 AM
Samsung says it has developed the first 2-gigabit (Gb) DDR2 SDRAM built on 80-nanometer (nm) process technology. The high density, DDR2 solution is designed to enhance server and workstation performance and enable faster deployment of memory intensive applications like real- time video conference, remote medical service, two-way communications, and 3-D graphics.
To build the part, Samsung uses double polygate technology, 20-angstrom level ultrathin oxide film process, and a triple-layer metal circuitry. The high-speed process technology coupled with the feasible 80nm technology also advances the time-to-market availability of the new DDR2 device.
Samsung plans to launch mass production of the part in the second half of 2005. The 2Gb DDR2 devices meet fine-pitch ball grid array (FBGA) package specifications for DDR2. Even without modifications, the devices can directly drive module density levels of gigabyte (Gbytes) scale; 2Gbyte, 4Gbyte and 8Gbyte.
Market researcher Gartner forecasts that DDR2 technology's market share will grow from 11% this year to 50% by year end 2005, making DDR2 the mainstream DRAM product.
The company expects aggregate sales of DDR2 to reach 15 million units in September and will continue to dedicate more of its DDR production to the high performance technology aiming for DDR2 to comprise 32% of its DDR business by year end.
Samsung says it has also developed the first 60nm 8Gb NAND flash memory chip for data storage medium such as low-density mobile hard disks for mobile appliances.
Samsung's advanced 60nm process technology results in line widths of two thousandths the width of a piece of human hair, and achieves approximately 30% reduction in cell size over the 70nm 4Gb NAND flash memory chip.
Expect NAND flash prices to rise
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