Im flash technologies, a joint venture between Intel and Micron Technology, has begun shipping samples of 50 nanometer (nm) multi-level cell NAND flash memory chips.

The new MLC NAND flash memory component has a die and cell size well suited for computers and consumer electronics devices that are increasingly smaller, according to the two companies. The 50nm MLC technology is sampling at a 16 gigabit (Gb) die density.

The new MLC NAND product caps a year of activity in which Intel, based in Santa Clara, Calif. and Micron have ramped a state-of-the-art 300 millimeter (mm) flash manufacturing factory network and are in the midst of developing sub-40nm NAND flash memory products.

Along with producing NAND flash out of Micron facilities in Boise, Idaho, and Manassas, Va., the IM Flash joint venture has been manufacturing wafers at a 300mm facility in Lehi, Utah.